این گروه های ویژگی مواد برای همه مدل های مواد در نیمه هادی ها (شامل خواص فیزیکی مرتبط با آنها) را می توان از پنجره Material به مدل ها اضافه کرد. این گروه های ویژگی توسط ماژول نیمه هادی استفاده می شود.
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ستون های Property Group، Variable Names و SI Unit برای همه مواد موجود در ماژول نیمه هادی قابل استفاده هستند. با این حال، ستون‌های Values و References فهرست شده در جدول 9-20 به طور خاص برای سیلیکون هستند.
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PROPERTY GROUP AND PROPERTY (ALL MATERIALS)
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NAME/VARIABLE (ALL MATERIALS)
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SI UNIT
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VALUE FOR SILICON
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REFERENCE FOR SILICON
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BASIC
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Relative permittivity
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epsilonr
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1
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11.7
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Ref. 1
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Thermal conductivity
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k
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W/(m·K)
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131 W/(m·K)
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Ref. 1
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Density
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rho
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kg/m3
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2329 kg/m3
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Ref. 1
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Heat capacity at constant pressure
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Cp
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J/(kg·K)
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700 J/(kg·K)
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Ref. 1
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BAND-GAP NARROWING MODELS>JAIN-ROULSTON MODEL
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Jain-Roulston coefficient (n-type), A
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An_jr
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V
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3.5·10-8 V
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Ref. 12
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Jain-Roulston coefficient (n-type), B
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Bn_jr
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V
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0 V
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Ref. 12
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Jain-Roulston coefficient (n-type), C
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Cn_jr
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V
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0 V
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Ref. 12
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Jain-Roulston coefficient (p-type), A
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Ap_jr
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V
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3.5·10-8 V
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Ref. 12
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Jain-Roulston coefficient (p-type), B
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Bp_jr
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V
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0 V
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Ref. 12
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Jain-Roulston coefficient (p-type), C
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Cp_jr
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V
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0 V
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Ref. 12
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Band-gap narrowing reference concentration
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Nref_jr
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1/m3
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1 1/cm3
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Ref. 12
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Conduction band fraction
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alpha_jr
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1
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0.5
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Ref. 12
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BAND-GAP NARROWING MODELS>SLOTBOOM MODEL
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Band-gap narrowing reference energy
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Eref_sb
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V
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0.00692 V
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Ref. 11
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Band-gap narrowing reference concentration
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Nref_sb
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1/m3
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1.3·1017 1/cm3
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Ref. 11
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Conduction band fraction
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alpha_sb
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1
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0.5
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Ref. 11
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GENERATION-RECOMBINATION>AUGER RECOMBINATION
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Auger recombination factor, electrons
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Cn
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m6/s
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2.8·10-31 cm6/s
(valid at 300 K) |
Ref. 2
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Auger recombination factor, holes
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Cp
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m6/s
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9.9·10-32 cm6/s
(valid at 300 K)
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Ref. 2
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GENERATION-RECOMBINATION>DIRECT RECOMBINATION
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Direct recombination factor
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C
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m3/s
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0 m3/s
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N/A
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GENERATION-RECOMBINATION>IMPACT IONIZATION
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a factor, electrons, impact ionization
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an
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1/V
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0.426 1/V
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Ref. 3
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a factor, holes, impact ionization
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ap
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1/V
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0.243 1/V
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Ref. 3
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b factor, electrons, impact ionization
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bn
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V/m
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4.81·105 V/cm
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Ref. 3
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b factor, holes, impact ionization
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bp
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V/m
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6.53·105 V/cm
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Ref. 3
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c factor, electrons, impact ionization
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cn
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1/KValues
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3.05·10-4 1/K
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Ref. 3
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c factor, holes, impact ionization
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cp
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1/K
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5.35·10-4 1/K
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Ref. 3
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d factor, electrons, impact ionization
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dn
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1/K
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6.86·10-4 1/K
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Ref. 3
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d factor, holes, impact ionization
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dp
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1/K
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5.67·10-4 1/K
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Ref. 3
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GENERATION-RECOMBINATION>SHOCKLEY-READ-HALL RECOMBINATION
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Electron lifetime, SRH
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taun
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s
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10 μs
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Ref. 4
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Hole lifetime, SRH
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taup
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s
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10 μs
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Ref. 4
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MOBILITY MODELS>ARORA MOBILITY MODEL
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Electron mobility reference
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mun0_ref_arora
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m2/(V·s)
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1252 cm2/(V·s)
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Ref. 5
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Hole mobility reference
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mup0_ref_arora
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m2/(V·s)
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407 cm2/(V·s)
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Ref. 5
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Electron mobility reference minimum
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mun_min_ref_arora
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m2/(V·s)
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88 cm2/(V·s)
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Ref. 5
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Hole mobility reference minimum
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mup_min_ref_arora
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m2/(V·s)
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53.4 cm2/(V·s)
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Ref. 5
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Electron reference impurity concentration
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Nn0_ref_arora
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1/m3
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1.26·10171/cm3
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Ref. 5
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Hole reference impurity concentration
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Np0_ref_arora
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1/m3
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2.35·10171/cm3
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Ref. 5
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Alpha coefficient
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alpha0_arora
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1
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0.88
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Ref. 5
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Mobility reference minimum exponent
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beta1_arora
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1
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-0.57
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Ref. 5
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Mobility reference exponent
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beta2_arora
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1
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-2.33
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Ref. 5
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Impurity concentration reference exponent
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beta3_arora
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1
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2.4
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Ref. 5
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Alpha coefficient exponent
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beta4_arora
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m2/(V·s)
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-0.146
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Ref. 5
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Reference temperature
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Tref_arora
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K
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300 K
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Ref. 5
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MOBILITY MODELS>CAUGHEY-THOMAS MOBILITY MODEL
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Electron alpha coefficient
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alphan0_ct
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1
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1.11
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Ref. 6
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Electron alpha exponent
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betan1_ct
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1
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0.66
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Ref. 6
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Electron saturation velocity
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vn0_ct
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m/s
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1·107 cm/s
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Ref. 6
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Electron velocity saturation exponent
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betan2_ct
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1
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-0.87
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Ref. 6
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Hole alpha coefficient
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alphap0_ct
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1
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1.21
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Ref. 6
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Hole alpha exponent
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betap1_ct
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0.17
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Ref. 6
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Hole saturation velocity
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vp0_ct
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m/s
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8.37·106 cm/s
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Ref. 6
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Hole velocity saturation exponent
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betap2_ct
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1
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-0.52
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Ref. 6
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Reference temperature
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Tref_ct
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K
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300 K
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Ref. 6
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MOBILITY MODELS>FLETCHER MOBILITY MODEL
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Fletcher mobility coefficient 1
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F1_fl
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1/(cm·V·s)
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1.04×1021 1/(cm·V·s)
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Ref. 7
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Fletcher mobility coefficient 2
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F2_fl
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1/m2
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7.45×1013 1/cm2
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Ref. 7
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Reference temperature
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Tref_fl
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K
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300 K
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Ref. 7
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MOBILITY MODELS>LOMBARDI SURFACE MOBILITY MODEL
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Electron delta coefficient
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deltan_ls
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V/s
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5.82 x 1014 V/s
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Ref. 8
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Electron mobility reference
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mun1_ls
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m2/(V·s)
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4.75 x 107cm2/(V·s)
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Ref. 8
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Electron mobility reference
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mun2_ls
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m2/(V·s)
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1.74 x 105 cm2/(V·s)
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Ref. 8
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Electron alpha coefficient
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alphan_ls
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1
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0.125
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Ref. 8
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Hole delta coefficient
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deltap_ls
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V/s
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2.05 x 1014 V/s
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Ref. 8
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Hole mobility reference
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mup1_ls
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m2/(V·s)
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9.93 x 107 cm2/(V·s)
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Ref. 8
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Hole mobility reference
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mup2_ls
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m2/(V·s)
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8.84 x 105 cm2/(V·s)
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Ref. 8
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Hole alpha coefficient
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alphap_ls
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1
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0.0317
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Ref. 8
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Reference temperature
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Tref_ls
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K
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1 K
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Ref. 8
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Electric field reference
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Eref_ls
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V/m
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1 V/cm
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Ref. 8
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Doping concentration reference
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Nref_ls
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1/m3
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1 1/cm3
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Ref. 8
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MOBILITY MODELS>POWER LAW MOBILITY MODEL
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Electron mobility reference
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mun0_pl
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m2/(V·s)
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1448 cm2/(V·s)
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Ref. 5
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Hole mobility reference
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mup0_pl
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m2/(V·s)
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473 cm2/(V·s)
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Ref. 5
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Electron exponent
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alphan_pl
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1
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2.33
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Ref. 5
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Hole exponent
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alphap_pl
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1
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2.23
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Ref. 5
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Reference temperature
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Tref_pl
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K
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300 K
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Ref. 5
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SEMICONDUCTOR MATERIAL
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Band gap
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Eg0
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V
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1.12 V
(valid at 300 K) |
Ref. 1
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Effective density of states, conduction band
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Nc
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1/m3
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2.8×1019 1/cm3
×(T/300 K)3/2 |
Ref. 1
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Effective density of states, valence band
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Nv
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1/m3
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1.04×1019 1/cm3
×(T/300 K)3/2 |
Ref. 1
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Electron affinity
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chi0
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V
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4.05 V
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Ref. 1
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Electron mobility
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mun
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m2/(V·s)
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1450 cm2/(V·s)
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Ref. 1
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Hole mobility
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mup
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m2/(V·s)
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500 cm2/(V·s)
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Ref. 1
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